The role of hole leakage in 1300-nm InGaAsN quantum-well lasers
Identifieur interne : 00C575 ( Main/Repository ); précédent : 00C574; suivant : 00C576The role of hole leakage in 1300-nm InGaAsN quantum-well lasers
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Abstract
We calculate the thermionic escape times of electrons and holes in InGaAsN and InGaAs quantum wells using the most recent input data. The short thermionic escape time of holes from the InGaAsN quantum well indicates that hole leakage may be a significant factor in the poorer temperature characteristics of InGaAsN quantum-well lasers compared to those of InGaAs devices. We suggest a structure that results in an increased escape time, which will allow the reduction of hole leakage in these devices. © 2003 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">The role of hole leakage in 1300-nm InGaAsN quantum-well lasers</title><author><name sortKey="Tansu, Nelson" uniqKey="Tansu N">Nelson Tansu</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison</wicri:cityArea></affiliation></author><author><name sortKey="Mawst, Luke J" uniqKey="Mawst L">Luke J. Mawst</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Wisconsin</region></placeName><wicri:cityArea>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">03-0123339</idno><date when="2003-03-10">2003-03-10</date><idno type="stanalyst">PASCAL 03-0123339 AIP</idno><idno type="RBID">Pascal:03-0123339</idno><idno type="wicri:Area/Main/Corpus">00DB26</idno><idno type="wicri:Area/Main/Repository">00C575</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Carrier density</term><term>Carrier lifetime</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Laser transitions</term><term>Leakage currents</term><term>Quantum well lasers</term><term>Theoretical study</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>4255P</term><term>4260B</term><term>8535B</term><term>7363H</term><term>Etude théorique</term><term>Indium composé</term><term>Gallium arséniure</term><term>Laser puits quantique</term><term>Durée vie porteur charge</term><term>Transition laser</term><term>Courant fuite</term><term>Densité porteur charge</term><term>Semiconducteur III-V</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We calculate the thermionic escape times of electrons and holes in InGaAsN and InGaAs quantum wells using the most recent input data. The short thermionic escape time of holes from the InGaAsN quantum well indicates that hole leakage may be a significant factor in the poorer temperature characteristics of InGaAsN quantum-well lasers compared to those of InGaAs devices. We suggest a structure that results in an increased escape time, which will allow the reduction of hole leakage in these devices. © 2003 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0></fA01><fA02 i1="01"><s0>APPLAB</s0></fA02><fA03 i2="1"><s0>Appl. phys. lett.</s0></fA03><fA05><s2>82</s2></fA05><fA06><s2>10</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>The role of hole leakage in 1300-nm InGaAsN quantum-well lasers</s1></fA08><fA11 i1="01" i2="1"><s1>TANSU (Nelson)</s1></fA11><fA11 i1="02" i2="1"><s1>MAWST (Luke J.)</s1></fA11><fA14 i1="01"><s1>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA20><s1>1500-1502</s1></fA20><fA21><s1>2003-03-10</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10020</s2></fA43><fA44><s0>8100</s0><s1>© 2003 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>03-0123339</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Applied physics letters</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We calculate the thermionic escape times of electrons and holes in InGaAsN and InGaAs quantum wells using the most recent input data. The short thermionic escape time of holes from the InGaAsN quantum well indicates that hole leakage may be a significant factor in the poorer temperature characteristics of InGaAsN quantum-well lasers compared to those of InGaAs devices. 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